microelectronic device造句
例句與造句
- The single event effect ( see ) of space microelectronic devices has been studied
本工作進行了空間微電子器件單粒子效應研究。 - Determining pinhole density in photoresist films used in microelectronic device processing
微電子器件加工過程用的光刻膜中針孔密度的測定 - This paper proposes to probe more effective methods for diagnosing reliability of microelectronic devices
本論文旨在探索更有效的微電子器件的可靠性評估方法。 - By this experiment , a new method of rapid evaluation to microelectronic device has been established
通過本實驗，已經(jīng)摸索出了一種微電子器件快速評價的新方法。 - Designers and manufacturers of microelectronic devices and systems . product details , examples of uses and technical data
-開發(fā)制造通信用射頻同軸連接器線纜組合光纖無源器件配線設備的廠家。 - It's difficult to find microelectronic device in a sentence. 用microelectronic device造句挺難的
- Both technique and its theory are briefly introduced , and applications to analyzing microelectronic devices are illuminated in the paper
本文簡要介紹這項新技術的功能原理和在微電子器件檢測等方面的具體應用。 - Space used microelectronic devices irradiated by the ions , the curves of seu cross section of the devices versus let ( linear energy transition ) were measured
在重離子輻照下，測量器件單粒子翻轉截面( )對重離子線傳能密度( let )關系曲線，即- let曲線。 - Test methods for microbiological monitoring of water used for processing electron and microelectronic devices by direct pressure tap sampling valve and by the presterilized plastic bag method
用直接加壓分接抽樣閥和用預先消毒塑料包法對電子和微電子器件加工用水微生物監(jiān)測的測試方法 - It is a good candidate for the high quality photoelectronic and microelectronic devices , such as fiber optical communication lasers , photoelectronic detectors , high electron mobility transistors and electro - optic modulators
它是制備性能優(yōu)良的光電子與微電子器件，如光纖通訊激光器、光電探測器、高電子遷移率晶體管、電光調制器等的主要選擇對象之一。 - This paper summarizes the present situation of modern microelectronic device is . with integrated degree of circuits increasing , and the characteristic sizes of technics minishing as well as the device sizes turning into sub - micron and deep sub - micron , there are many problems
概述了現(xiàn)代微電子器件發(fā)展的現(xiàn)狀，電路集成度的不斷提高，加工工藝特征尺寸的不斷減小，器件尺寸進入了亞微米、深亞微米階段，出現(xiàn)了許多不良效應。 - Hence , low temperature growth of high quality silicon carbide ( sic ) film , which is advantageous to effectively solve perplexed problems existing in the film such as the self - compensation , intrinsic stress and impurity , plays a critical leading role on applications of sic film , especially the application on microelectronic devices
高質量sic薄膜的低溫生長，不僅有利于解決自補償問題，而且有利于解決薄膜中存在應力和雜質等問題，對sic薄膜的應用，特別是在微電子器件上的應用非常關鍵。因此，低溫制備高質量sic薄膜成了倍受關注的重要課題。 - Integrated vacuum microelectronic device was designed in terms of computer simulation result and semiconductor technique . we also developed zvd - 1 testing instrument for vacuum microelectronic device properties . after comparing the experimental data and simulation results of the electrical properties , we got the conclusion which will be benefit for the advanced study of vacuum microtriodes
在對模擬結果進行仔細分析后，結合半導體微細加工的特點在工藝條件允許的范圍內建立了一套較完整的真空微電子三極管的優(yōu)化設計方案，并從試驗上制備出真空微電子三極管的測試樣品。 - Silicon ( si ) is the leading material of microelectronic devices , but the nature of indirect band gap of si hinders its applications in integrated optoelectronics . to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology
硅是微電子器件的主要材料，但硅的間接能隙特性嚴重制約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發(fā)光材料，就可利用已有成熟的硅集成技術發(fā)展硅光電子集成，從而有可能完全改變信息技術的面貌。 - More recently , the advent of new soi wafer fabrication techniques and the explosive growth of portable microelectronic devices have attracted considerable attention on soi for the fabrication of low - power ( lp ) , low - voltage ( lv ) , and high - frequency ( hf ) cmos circuits . in this thesis , we study the electrical characterization on soi wafers and design a low - power soi cmos dram structure
第二部分我們對高性能低功耗soidram結構的設計進行了研究，設計了一個低壓低功耗soidram陣列模型，介紹了我們的dram的邏輯結構設計，存儲單元設計，存儲器陣列的設計，及讀寫電路等外圍電路的設計。 - The rate of single event upset ( seu ) for space - based missions has been predicted by means of ground - based particle accelerator test and simulation calculation based on models of space radiation environment and the interaction of ions with the microelectronic device
我們采用的方法是用地面重離子加速器模擬實驗和計算機模擬空間輻射環(huán)境進行單粒子翻轉率預估計算。引發(fā)單粒子翻轉的空間高能帶電粒子環(huán)境包括銀河宇宙線，太陽宇宙線和地球輻射帶中的高能質子及重離子。
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